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| Issue Date | Title | Author(s) |
| 1995 | Dependence of Transient and Steady State Creep on Grain Size in Aged Al- 10wt % Zn Alloy. | S. B. Youssef; Beshai, Mourad ; A. Fawzy; G. Saad; Milad Sobhy Megalaa |
| 2011 | Effect of Adding Cobalt on The Mechanical and Structural Properties of Cu – 2 wt % Be Alloy Aged Below Half Its Melting Temperature. | Beshai, Mourad ; G. H. Deaf; G. Saad; S. B. Youssef; M. Sobhy |
| 2013 | Effect of Adding Zirconium on The Mechanical and Structural Properties of Al – 4 wt % Ge Alloy. | G. H. Deaf; N. D. Habib; Beshai, Mourad ; J. A. Fawzy |
| 1999 | Effect of Annealing and Microstructure on the Creep Behaviour of an Sn - 10 % Sb Alloy. | A. M. Yassein; R. L. Reuben; G. Saad; Beshai, Mourad ; S. K. Habib |
| 1999 | Effect of SnSb Particle Size on Creep Behaviour under Power Law Regime of Sn - 10 % Sb Alloy. | Beshai, Mourad ; S. K. Habib; A. M. Yassein; G. Saad; M. M. Hasab El - Naby |
| 1997 | Effect of Superimposed Low Frequency Oscillations on the Static Creep Behaviour of Al-1 wt % Si and AM wt % Si - 0.1 wt % Zr - 0.1 wt % Ti Alloys. | Beshai, Mourad ; G. H. Deaf; A. M. Abd El Khalek; G. Graiss; M. A. Kenawy |
| 1980 | An Emperical Formula to Evaluate the Threshold Voltage of Amorphous Switching Devices. | M. A. Afifi; M. A. Kamel; M. A. K. El-Adawi; Beshai, Mourad |
| 20-Jun-1988 | Laser-Produced Plasma Enhanced Reactive Quenching. | R. Pratap; Beshai, Mourad |
| 1995 | Resistometric Study of Al - 10 % Zn Aged Below and Above Half of the Melting Temperature. | S. B. Youssef; Beshai, Mourad ; A. Fawzy; M. Sobhy; G. Saad |
| 1999 | Resistometric Study of Two - Phase Al - 3 wt % Mn Alloy. | Beshai, Mourad |
| 1997 | Stabilization Effect of Zr and Ti Additions on the Aging Characteristics of Al - 1 wt % Si Alloy Through a Creep Study. | G. H. Deaf; Beshai, Mourad ; A. M. Abd El Khalek; G. Graiss; M. A. Kenawy |
| 25-Feb-1998 | A Study of Oxygen Implanted Titanium Surface. | Beshai, Mourad ; R. Pratap; A. D. Yadav |
| 1987 | Surface Hardness Enhancement of Titanium by Ion Implantation. | R. Pratap; Beshai, Mourad ; R. T. Dhamejani |
| 1994 | Temperature Dependence of Grain Growth in Zone-Refined Tin Containing Large Additions of Zinc in Solid Solution. | A. Fawzy; S. B. Youssef; Beshai, Mourad ; G. Saad |
| 1979 | Thermal Analysis for I-V Characteristics of Amorphous Semiconductor Switching Devices. | M. A. Afifi; M. A. Kamel; M. A. K. El-Adawi; Beshai, Mourad |
| 1980 | Threshold Switching in Semiconductor Glass Film. | M. A. Kamel; M. A. Afifi; Beshai, Mourad |
| 1997 | Transient Creep Characteristics of Al - 1 wt % Si and Al - 1 wt % Si - 0.1 wt%Zr - 0.1 wt%Ti. | G. H. Deaf; Beshai, Mourad ; A. M. Abd El Khalek; G. Graiss; M. A. Kenawy |
| 1987 | XPS and FT-IR Studies of a Titanium Nitride Compound Thin Layer Prepared by Ion Implantation. | R. Pratap; Beshai, Mourad |
