Hegab, N. A.

naimahejab@edu.asu.edu.eg
Interests: semiconductor,
Internal ID: rp11352
  • 107 Scopus Citations
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Full Name
Hegab, N. A.
 
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Publications

Results 1-20 of 40 (Search time: 0.0 seconds).

Issue DateTitleAuthor(s)
11998Effect of annealing on the structural and electrical properties of ln2Te3Hegab, N. A. ; M.A.Afifi; A.A.El-shazly; A.E.Bekheet
21999Temperature and light soaking dependence of the dc electrical conductivity of binary amorphous Sb–Se FilmsFadel, M.; Abd ElWahabb, Ensherah ; Hejab, Naima 
32000Conduction mechanism in the off state of thin Te48-y As30+y Ge10 Si12 filmsHegab, N. A. 
42000Temperature dependence of electrical and thermal properties of Te82.2Ge13.22Si4.58glassy alloyHegab, N. A. ; Fadel, M; Afifi, M A; Shawer, M F
52000Effect of Sn content on the electrical and optical properties of Ge1−xSnxSe3 glassesFadel, M.; Sedeek, K.; Hegab, N. A. 
62001Electrical properties of amorphousTe38+yAs40-y Ge10 Si12Hegab, N. A. 
72001Conduction mechanism in amorphous ln2 III X3 VI thin filmsHegab, N. A. ; A.E.Bekheet
828-Oct-2005AC conductivity and dielectric properties of Sb<inf>2</inf>Te<inf>3</inf> thin filmsFarid, Ashgan ; Atyia, H. E.; Hegab, N. A. 
92006Conduction studies on amorphous InSbX3 (X = Te or Se) thin filmsHegab, N. A. ; H.E. Atyia
102007The effect of Cd addition on the optical properties of Se70Te30filmsAfifi, M A; Hegab, N. A. ; Wahab, L A; Shehata, H A; Bekheet, A.E.
112007Dielectric studies of amorphous As45Te33Ge10Si12 filmsHegab, N. A. ; H.E. Atyia
122007Switching phenomenon in a Se70Te30–xCdxfilmsAfifi, M. A.; Hegab, N. A. ; Wahab, L. A.; Shehata, H. A.; Bekheet, A.E.
132008Electrical properties of amorphous Ge15Se60M25 where (M=As or Sn or Bi) filmsAfifi, M.A.; Hegab, N. A. ; Atyia, H.E.; Ismael, M.I.
142008Optical Properties of as45Te33Ge10Si12 Thin FilmsHegab, N. A. ; El-Mallah, H. M.
152008Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous systemAfifi, M.A.; Hegab, N. A. ; Atyia, H.E.; Farid, A.S.
162008Ac conductivity and dielectric properties of Ge20Se75In5 filmsHegab, N. A. ; Bekheet, A.E.
172009Electrical and Switching Properties of the Se90 Te10-x Agx (0≤x≤6) FilmsM.A. Afifi; Hegab, N. A. ; A.E. Bekheet; E.R. Sharaf
182009AC Conductivity and Dielectric Properties οf Amorphous Te42As36Ge10Si12GlassHegab, N. A. ; El-Mallah, H.M.
192009ac conductivity and dielectric properties of amorphous Se80Te20−xGex chalcogenide glass film compositionsHegab, N. A. ; Afifi, M.A.; Atyia, H.E.; Farid, A.S.
202009The effect of Ag addition on the optical properties of Se90Te10 filmsHegab, N. A. ; Afifi, M.A.; Atyia, H.E.; Sharaf, E.R.; Bekheet, A.E.