A NEW ANALYTICAL MODEL FOR A GRADED-BASE SINGLE QUANTUM WELL TRANSISTOR LASER
Mostafa Radwan Hassan Abdelhamid;
Abstract
Key Words:
Transistor Laser; Quantum-Well; Optoelectronics; modeling; composition grading
Summary:
The Transistor Laser (TL) device has shown great potential for the use in optical
communications in the near future with its superiority in performance to the
regularly used Laser Diodes (LDs). In our work, we have derived a closed-form
analytical model for a Single Quantum-Well (QW) Transistor Laser (TL) device. The
model incorporates the effect of thermionic-emission and tunneling at the abrupt
emitter-base junction as a boundary condition for the continuity equation of the
minority carriers in the base region. By combining the continuity equation with a
virtual state based two-level rate equations, a complete analytical solution is obtained.
The model results show good agreement with previously published experimental data.
Thus, we have extended the model to investigate the effect of composition grading in
the base region on the device performance. Our model shows that a lower threshold
current and a higher optical bandwidth can be achieved with proper grading. A
parametric study was also conducted on the proposed model to investigate the effect
of different design parameters on the overall performance of the transistor laser
Transistor Laser; Quantum-Well; Optoelectronics; modeling; composition grading
Summary:
The Transistor Laser (TL) device has shown great potential for the use in optical
communications in the near future with its superiority in performance to the
regularly used Laser Diodes (LDs). In our work, we have derived a closed-form
analytical model for a Single Quantum-Well (QW) Transistor Laser (TL) device. The
model incorporates the effect of thermionic-emission and tunneling at the abrupt
emitter-base junction as a boundary condition for the continuity equation of the
minority carriers in the base region. By combining the continuity equation with a
virtual state based two-level rate equations, a complete analytical solution is obtained.
The model results show good agreement with previously published experimental data.
Thus, we have extended the model to investigate the effect of composition grading in
the base region on the device performance. Our model shows that a lower threshold
current and a higher optical bandwidth can be achieved with proper grading. A
parametric study was also conducted on the proposed model to investigate the effect
of different design parameters on the overall performance of the transistor laser
Other data
| Title | A NEW ANALYTICAL MODEL FOR A GRADED-BASE SINGLE QUANTUM WELL TRANSISTOR LASER | Other Titles | نموذج تحليلي جديد للترانزيستور ليزر ذي قاعدة متدرجة وبئر كمي واحد | Authors | Mostafa Radwan Hassan Abdelhamid | Issue Date | 2017 |
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