Electrical and Optical Properties of Silicon Solar Cell Heterojunction

Abstract

The optical and electrical properties of metal-semiconductor (MS), metal oxide-semiconductor (MOS) and semiconductor-oxide-semiconductor (SOS) solar cells are investigated.

The samples in the present work take the symbols:

II: Pd- Au I (ITO (In 0.80- Sn 0.20) I n-Si I AI

12: Pd- Au I (ITO (In 0.80- Sn 0.20) I n-Si I AI [annealed at 450 °C/15] A: Pd- Au I (ITO (ln0.95- Sn 0.05) I p-Si /AI B: Pd- Au I (ITO (In 0.90- Sn 0.10) I p-Si /AI

Fl: AI I Sn02 In- Si I AI

F2: Pd- Au I Sn02 In- Si I AI

Y: AI!Si02 /n-Si/AI

ITO (A): (ITO/ Glass substrate) in which (ln-Sn) in the ratio of (80:20). ITO (B): (ITO/ Glass substrate) in which (In-Sn) in the ratio of (90: I 0). ITO(C): (ITO/ Glass substrate) in which (In-Sn) in the ratio of (95: 5). ITO (D): (ITO/ Glass substrate) in which (ln-Sn) in the ratio of (70: 30). ITO (E): (ITO/ Glass substrate) in which (ln-Sn) in the ratio of (85: 15).

The samples were prepared using <Ill> n, p-type silicon single crystal wafers having resistivity - SQ. em. The wafers thickness was of order of (310 ±15 !!ill). Indium-tin is sputtered with certain ratio. Indium tin oxide (ITO) is formed by heating. A layer of metal was deposited on the front and back contact.

The photocurrent was measured at the wavelength range (150-1500 nrn) and different temperatures (293, 313 and 333K). The photocurrent increases with increasing the wavelength then reach to a maximum at fundamental absorption. The peaks differ from one sample to another. It was found that the photocurrent depends