Modeling and Simulation of Carbon Nanotube Field Effect Transistors
Mostafa Hassan Fedawy;
Abstract
Aggressive scaling of silicon based transistors has led to higher integration density,highercircuits performance, and low power consumption. However, it is expected to reach to its limit by 2020. Carbon Nanotube Field Effect Transistor (CNTFET)is currentl
Other data
| Title | Modeling and Simulation of Carbon Nanotube Field Effect Transistors | Other Titles | نمذجة وحسابات التيارات في أنبوب الكربون ذو أبعاد النانو | Authors | Mostafa Hassan Fedawy | Keywords | Modeling and Simulation of Carbon Nanotube Field Effect Transistors | Issue Date | 2014 | Description | Aggressive scaling of silicon based transistors has led to higher integration density,highercircuits performance, and low power consumption. However, it is expected to reach to its limit by 2020. Carbon Nanotube Field Effect Transistor (CNTFET)is currentl |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| 124302G3453.pdf | 176.85 kB | Adobe PDF | View/Open |
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