Modeling and Simulation of carrier transport in modern Nanoscale transistors
Mohammed Mahmoud Ahmed Mohammed El-Banna;
Abstract
FETMOSS simulator was developed in 2006 by our group of devices in Ain shams University. It works under MATLAB environment and based on the numerical solution of Poisson’s and Schrödinger equations self-consistently. Simulation for 2D DG nMOSFETs with UMS
Other data
| Title | Modeling and Simulation of carrier transport in modern Nanoscale transistors | Other Titles | نمذجة ومحاكاة انتقال حاملات الشحنات فى الترانزستورات النانونية الحديثة | Authors | Mohammed Mahmoud Ahmed Mohammed El-Banna | Keywords | Modeling and Simulation of carrier transport in modern Nanoscale transistors | Issue Date | 2011 | Description | FETMOSS simulator was developed in 2006 by our group of devices in Ain shams University. It works under MATLAB environment and based on the numerical solution of Poisson’s and Schrödinger equations self-consistently. Simulation for 2D DG nMOSFETs with UMS |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| 103525p3026.pdf | 154.97 kB | Adobe PDF | View/Open |
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