Modeling and Simulation of Nano Scale MOSFET
Mona Mohamed-Amin Abdel Aziz El Sabbagh;
Abstract
The rapid progress of CMOS technology pushes the dimension of devices in the nano scale range where quantum effects start to become important. Reduced channel lengths change the transport from drift diffusion to ballistic where scattering is rare. DG MOSF
Other data
| Title | Modeling and Simulation of Nano Scale MOSFET | Other Titles | نمذجة و محاكاة ترانزستورات معدن أكسيد شبه موصل نانومترية | Authors | Mona Mohamed-Amin Abdel Aziz El Sabbagh | Keywords | Modeling and Simulation of Nano Scale MOSFET | Issue Date | 2010 | Description | The rapid progress of CMOS technology pushes the dimension of devices in the nano scale range where quantum effects start to become important. Reduced channel lengths change the transport from drift diffusion to ballistic where scattering is rare. DG MOSF |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| 93833p98.pdf | 115.39 kB | Adobe PDF | View/Open |
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