Study the optical and the photo-electrical properties of Pb1-xSnxSe thin film prepared by Pulsed laser deposition as compared with other technique
Sara Mohamed Abd Elazeem Gad;
Abstract
Summary
IV-VI semiconductors are commonly considered to be promising materials applications in the mid-infrared as optoelectronic emitters, sensors, and detectors. The lead-chalcogenide layers are such as Pb0.9Sn0.1Se with band gaps of 0.1- 0.2 eV. Lead c
IV-VI semiconductors are commonly considered to be promising materials applications in the mid-infrared as optoelectronic emitters, sensors, and detectors. The lead-chalcogenide layers are such as Pb0.9Sn0.1Se with band gaps of 0.1- 0.2 eV. Lead c
Other data
| Title | Study the optical and the photo-electrical properties of Pb1-xSnxSe thin film prepared by Pulsed laser deposition as compared with other technique | Other Titles | "دراسة الخواص الضوئية والكهروضوئية لغشاء سيلينيد الرصاص القصديري المحضر بطريقة الليزر النبضي مقارنة بالطرق الاخري""دراسة الخواص الضوئية والكهروضوئية لغشاء سيلينيد الرصاص القصديري المحضر بطريقة الليزر النبضي مقارنة بالطرق الاخري" | Authors | Sara Mohamed Abd Elazeem Gad | Keywords | Study the optical and the photo-electrical properties of Pb1-xSnxSe thin film prepared by Pulsed laser deposition as compared with other technique | Issue Date | 2011 | Description | Summary IV-VI semiconductors are commonly considered to be promising materials applications in the mid-infrared as optoelectronic emitters, sensors, and detectors. The lead-chalcogenide layers are such as Pb0.9Sn0.1Se with band gaps of 0.1- 0.2 eV. Lead c |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| Binder1.pdf | 430.17 kB | Adobe PDF | View/Open |
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