Growth and characterization of Ga2TI3 and Tl5Te3 crystals

Eman Jaber Hamza;

Abstract


As a result of the advances in technology, in the present time, a new semiconducting materials are needed. Semiconductor materials formed from A111 Bv1 group are having a unique characters.
In recent years much attraction have been paid to the telluride compounds. For this reason the present work was focused on TI5Te3 and Ga2Te3 crystals.
In this research the following points were considered:-
!- Literature survey revealed a considerable lack in the work concerning those crystals.
2- The melt growth technique was employed for growing the crystals.
3-lnvestigations (x - ray) were done in CRMDI (Cairo, Egypt) to ensure the crystallinity and avoid the possibility of presence of any other secondary phases in the grown crystals.
4- The crystals were of layer nature. Accordingly the electrical conductivity, for both crystals, was measured in two different crystallographic directions.
5- Liquid nitrogen was used for the purpose of low temperature measurements.
6-ln the present research a very simple designs to a chieve the
work. So a simple locally designed Pyrex cryostat was used for the electrical conductivity measurements. Also a brass working chamber (calorimeter) was used for the purpose of thermoelectric measurements. However the accuracy of the measurements was satisfactory.


Other data

Title Growth and characterization of Ga2TI3 and Tl5Te3 crystals
Other Titles النمو البللورى وخصائص بللورات تليريد الجاليوم وتليريد الثاليوم الشبه موصلة
Authors Eman Jaber Hamza
Issue Date 2001

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