OPTICAL, ELECTRICAL AlVD STRUCTURAL PROPERTIES OF As- Te- Ga CHALCOGENIDE SYSTEM
ABD-ELSALAM FOAD ABD-ELHADY;
Abstract
1- The chalcogenide alloys As30Te7o-xGax where x varies between 0.5 and I 0 at.% were prepared by melting the constituents in vacuum sealed silica tubes at II 00 k for about 25 hours followed by rapid quenching in
I
water. .I
2- The chemical compositions of the As-Te-Ga films was determined using energy dispersive spectral analysis EDS.
3- X"ray diffraction examination indicated that the as-deposited films of different compositions were amorphous.
'
!
4- Values of Tg, Tc and Tm for the quenched
determined from the DSC thermograms.
chalcogenide alloys wire
5- The selected area electron diffraction confirmed the amorphous structure
I
of the as-deposited films of different compositions.
6- The morphology and structure of thermally annealed As-Te-Ga films
!
were analyzed using TEM. The degree of crystallization was found to
mcrease with increasing the annealing temperature. The thermdlly
. I
induced crystalline phases were determined by measuring the d- spacings in the selected area electron diffraction patterns. As the annealing temperature was increased above Tg, crystalline phaseJ of
AsTe, GaTe and GazTes were observed. I
-
I
water. .I
2- The chemical compositions of the As-Te-Ga films was determined using energy dispersive spectral analysis EDS.
3- X"ray diffraction examination indicated that the as-deposited films of different compositions were amorphous.
'
!
4- Values of Tg, Tc and Tm for the quenched
determined from the DSC thermograms.
chalcogenide alloys wire
5- The selected area electron diffraction confirmed the amorphous structure
I
of the as-deposited films of different compositions.
6- The morphology and structure of thermally annealed As-Te-Ga films
!
were analyzed using TEM. The degree of crystallization was found to
mcrease with increasing the annealing temperature. The thermdlly
. I
induced crystalline phases were determined by measuring the d- spacings in the selected area electron diffraction patterns. As the annealing temperature was increased above Tg, crystalline phaseJ of
AsTe, GaTe and GazTes were observed. I
-
Other data
| Title | OPTICAL, ELECTRICAL AlVD STRUCTURAL PROPERTIES OF As- Te- Ga CHALCOGENIDE SYSTEM | Other Titles | الخواص الضوئية والكهربية والتركيب الدقيق للنظام الكالكوجينى زرنيخ - تيليريوم - جاليوم | Authors | ABD-ELSALAM FOAD ABD-ELHADY | Issue Date | 1998 |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| B10022.pdf | 255.89 kB | Adobe PDF | View/Open |
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