A Compact Model for Nanoscale Transistors
Ahmed Fathy Abo-Elhadeed Hassan;
Abstract
Down-scaling of MOS devices is continuously attempted aiming to achieve faster circuit speed, smaller area, and lower power dissipation. Multi-gate MOSFET is one of the most promising semiconductor devices that was proven to be the best choice for future
Other data
| Title | A Compact Model for Nanoscale Transistors | Other Titles | النمذجة المدمجة للترانزستورات النانومترية | Authors | Ahmed Fathy Abo-Elhadeed Hassan | Keywords | A Compact Model for Nanoscale Transistors | Issue Date | 2010 | Description | Down-scaling of MOS devices is continuously attempted aiming to achieve faster circuit speed, smaller area, and lower power dissipation. Multi-gate MOSFET is one of the most promising semiconductor devices that was proven to be the best choice for future |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| 92262Untitled.pdf | 148.71 kB | Adobe PDF | View/Open |
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