Monitoring subterraneous water regime at the new Ain Shams university campus in Al-Obour city (northeast of Cairo–Egypt) using both azimuthal very low frequency–electromagnetic and DC–resistivity sounding techniques
Farag K.; Abd El-Aal M.; Garamoon H.;
Abstract
© 2018 Elsevier Ltd A joint azimuthal very low frequency–electromagnetic (VLF–EM) and DC–resistivity sounding survey was conducted at the new Ain Shams university campus in Al-Obour city, northwest of Cairo, Egypt. The main objective of the survey was to highlight the applicability and reliability of such non-invasive surface techniques in mapping and monitoring both the vertical and lateral electrical conductivity structures of waterlogged areas, by subterraneous water accumulations, at the campus site. Consequently, a total of 743 azimuthal VLF–EM and 4 DC–resistivity soundings were carried out in June, 2011, 2012 and 2013. The data were interpreted extensively and consistently in terms of two-dimensional (2D) transformed EM equivalent current-density and stitched inverted electrical resistivity models, without using any geological a-priori information. They could be used effectively to image the local anomalous lower electrical resistivity (higher EM equivalent current-density) structures and their near-surface spreading with time, due to the excessive accumulations of subterraneous water at the campus site. The study demonstrated that a regional azimuthal VLF–EM and DC–resistivity sounding survey could help design an optimal dewatering program for the whole city, at greatly reduced execution time.
Other data
Title | Monitoring subterraneous water regime at the new Ain Shams university campus in Al-Obour city (northeast of Cairo–Egypt) using both azimuthal very low frequency–electromagnetic and DC–resistivity sounding techniques | Authors | Farag K. ; Abd El-Aal M. ; Garamoon H. | Issue Date | 1-Jul-2018 | Journal | Journal of African Earth Sciences | DOI | https://api.elsevier.com/content/abstract/scopus_id/85048246814 339 143 10.1016/j.jafrearsci.2018.02.002 |
Scopus ID | 2-s2.0-85048246814 |
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