Satellite power amplifier design and implementation in the S-band used for jamming
Ahmed Mahmoud Esmail Ahmed;
Abstract
Abstract
A power amplifier (PA) in S band as a main component of satellite
jammer is presented. Amplifying a noise signal with high output power
and efficiency was target irrespectively of linearity, signal distortion and
conductivity.
A PA with GaN HEMT transistor operating in the beginning of
saturation region was the optimum choice to get maximum out power and
good efficiency with smallest power dissipation, the design of high Sband
PA with two different approaches and implementation of one of
them are carried out, in addition a Balanced PA using Microstrip line and
using stripline couplers are designed.
A power amplifier (PA) in S band as a main component of satellite
jammer is presented. Amplifying a noise signal with high output power
and efficiency was target irrespectively of linearity, signal distortion and
conductivity.
A PA with GaN HEMT transistor operating in the beginning of
saturation region was the optimum choice to get maximum out power and
good efficiency with smallest power dissipation, the design of high Sband
PA with two different approaches and implementation of one of
them are carried out, in addition a Balanced PA using Microstrip line and
using stripline couplers are designed.
Other data
| Title | Satellite power amplifier design and implementation in the S-band used for jamming | Other Titles | تصميم وتنفيذ مكبر قدرة للقمر الصناعي في حيزS-band وإستخدامة في مجال الإعاقة | Authors | Ahmed Mahmoud Esmail Ahmed | Issue Date | 2018 |
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