PREDICTIVE CIRCUIT MODELING OF TOTAL IONIZING DOSE EFFECTS ON ِBULK CMOS TECHNOLOGIES

Abstract

Most activities inside nuclear facilities are carried out in well-shielded areas to achieve the needed safety requirements against the exposure to ionizing radiation. This implies the necessity of employment of remote inspection and handling electronic equipment inside these areas. Therefore, these electronic equipment should be radiation tolerant to be able to work properly over its expected lifetime. The gamma rays are the main threatening ionizing radiation on electronic equipment mounted in nuclear facilities. Total Ionizing Dose (TID) introduced by the gamma radiation into silicon dioxide portions of MOS devices can cause their functionality failure.