A facile method to prepare g-carbon nitride/poly(vinyl alcohol) nanocomposite films with remarkable optoelectrical properties: Laser attenuation approach
Ismail, A.M.; Yahia, I.S.; M.I.Mohammed;
Abstract
Nanocomposites consisting of polyvinyl alcohol (PVA) and graphitic carbon nitride nanoparticles (g-C3N4) were
fabricated by solution casting technique. XRD has shown that the semicrystalline PVA structure is greatly affected
by the incorporation of g-C3N4, which is confirmed by SEM images. Optical characteristics are investigated
at room temperature within the wavelength range (200–1500 nm). The effect of g-C3N4 content on the
optical band gap was studied. The optical bandgaps, direct and indirect, of g-C3N4 doped films, is lower than
pristine PVA. Urbach’s energy increased from 0.42 eV for PVA to 0.96 eV for 14.8 wt% g-C3N4 doped film. The
dielectric constant , dielectric loss , and AC electrical conductivity σac at RT as a function of frequency from
100 Hz to 1 MHz, and g-C3N4 doping level were studied. The variation of acwith frequency was analyzed in view
of Jonscher's universal power law. Adding g-C3N4 appears to enhance the acof the films to higher values that
candidates them in semiconductors applications. The results optical limiting indicates that the samples doped
with g-C3N4 are highly attenuated for the laser beam of 638.2 nm. g-C3N4-doped PVA is a promising candidate
for electronic and optoelectronic applications, especially the attenuation of laser power.
fabricated by solution casting technique. XRD has shown that the semicrystalline PVA structure is greatly affected
by the incorporation of g-C3N4, which is confirmed by SEM images. Optical characteristics are investigated
at room temperature within the wavelength range (200–1500 nm). The effect of g-C3N4 content on the
optical band gap was studied. The optical bandgaps, direct and indirect, of g-C3N4 doped films, is lower than
pristine PVA. Urbach’s energy increased from 0.42 eV for PVA to 0.96 eV for 14.8 wt% g-C3N4 doped film. The
dielectric constant , dielectric loss , and AC electrical conductivity σac at RT as a function of frequency from
100 Hz to 1 MHz, and g-C3N4 doping level were studied. The variation of acwith frequency was analyzed in view
of Jonscher's universal power law. Adding g-C3N4 appears to enhance the acof the films to higher values that
candidates them in semiconductors applications. The results optical limiting indicates that the samples doped
with g-C3N4 are highly attenuated for the laser beam of 638.2 nm. g-C3N4-doped PVA is a promising candidate
for electronic and optoelectronic applications, especially the attenuation of laser power.
Other data
Title | A facile method to prepare g-carbon nitride/poly(vinyl alcohol) nanocomposite films with remarkable optoelectrical properties: Laser attenuation approach | Authors | Ismail, A.M. ; Yahia, I.S.; M.I.Mohammed | Keywords | g-C3N4-doped polyvinyl alcohol;Graphitic carbon nitride;Nanocomposites XRD;Optical properties;Dielectric properties;laser power attenuation | Issue Date | 2021 | Publisher | Elsevier | Journal | Optics & Laser Technology | Volume | 134 | Issue | 106600 | ISSN | 00303992 | DOI | 10.1016/j.optlastec.2020.106600 | Scopus ID | 2-s2.0-85091233561 |
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