DC electrical conductivity and switching phenomena of amorphous Te81Ge15Bi4 films

Afifi, M.A.; E. G. El-Metwally; Mostfa, M.; Hejab, Naima;

Abstract


Thin films of Te81Ge15Bi4 were prepared from its bulk glass by thermal evaporation method. Amorphous
structure of the prepared films was examined by X-ray diffraction (XRD). Differential thermal analysis
(DTA) was carried out to obtain the glass transition temperature Tg. DC conductivity sdc was studied as a
function of temperature below Tg in the range (303e393 K) and in thickness range (143e721 nm). The
results obtained are based on the model of Mott and Davis. The obtained films were found to exhibit
memory type of electrical switching behaviour. The threshold switching voltage Vth is found to be
reduced exponentially with temperature and enhanced with the thickness of the film in the considered
range. The obtained results of the switching behaviour are interpreted according to the electrothermal
model motivated by Joule heating.


Other data

Title DC electrical conductivity and switching phenomena of amorphous Te81Ge15Bi4 films
Authors Afifi, M.A.; E. G. El-Metwally ; Mostfa, M.; Hejab, Naima 
Keywords Amorphous semiconductors;Conductivity;Electrical switching phenomenon
Issue Date 11-Jun-2018
Publisher Elsevier
Journal Journal of Alloys and Compounds 
Volume 764
Start page 498
End page 504
ISSN 09258388
DOI 10.1016/j.jallcom.2018.06.114

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