Optical characteristics and dispersion parameters of thermally evaporated Ge50In4Ga13Se33 chalcogenide thin films
E. G. El-Metwally; Fouad, S.S.; Assim, Eman;
Abstract
Ge50In4Ga13Se33 glassy composition was fabricated using the chemical composition and the melt quenching
technique. Using X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis, the structural characterization
of the thermally evaporated films with different thicknesses (126–745 nm) used in this study was determined.
Transmittance T (λ) spectrum was obtained in the range of wavelength from 400 nm to 2500 nm at
room temperature. Swanepoel’s method was employed to evaluate the optical constants, refractive index n and
extinction coefficient k. From the obtained data of n, transmission coefficient TC and reflection loss factor RL
were determined. Optical band gap Eg
opt and Urbach tail Eu were determined using Tauc’s extrapolation method.
The calculated value of the transition power factor p revealed the indirect optical transition indicated in this
study. The Wemple-DiDomenico parameters are also reported for the composition under study. The dependency
of real ε1 and imaginary ε2 components of dielectric constant, dissipation factor tanδ, relaxation time τ volume
and surface energy loss functions and the optical conductivity σopt on photon energy hν were studied also for
Ge50In4Ga13Se33 films. In addition, the 3rd order non-linear optical susceptibility χ (3) and non-linear refractive
index n2 were determined.
technique. Using X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis, the structural characterization
of the thermally evaporated films with different thicknesses (126–745 nm) used in this study was determined.
Transmittance T (λ) spectrum was obtained in the range of wavelength from 400 nm to 2500 nm at
room temperature. Swanepoel’s method was employed to evaluate the optical constants, refractive index n and
extinction coefficient k. From the obtained data of n, transmission coefficient TC and reflection loss factor RL
were determined. Optical band gap Eg
opt and Urbach tail Eu were determined using Tauc’s extrapolation method.
The calculated value of the transition power factor p revealed the indirect optical transition indicated in this
study. The Wemple-DiDomenico parameters are also reported for the composition under study. The dependency
of real ε1 and imaginary ε2 components of dielectric constant, dissipation factor tanδ, relaxation time τ volume
and surface energy loss functions and the optical conductivity σopt on photon energy hν were studied also for
Ge50In4Ga13Se33 films. In addition, the 3rd order non-linear optical susceptibility χ (3) and non-linear refractive
index n2 were determined.
Other data
Title | Optical characteristics and dispersion parameters of thermally evaporated Ge50In4Ga13Se33 chalcogenide thin films | Authors | E. G. El-Metwally ; Fouad, S.S.; Assim, Eman | Keywords | Chalcogenide glasses;Amorphous semiconductors;Optical constants;Linear and non-linear optics | Issue Date | 25-Jun-2020 | Publisher | elsevier | Journal | Optics & Laser Technology | Volume | 133 | ISSN | 00303992 | DOI | 10.1016/j.optlastec.2020.106462 |
Attached Files
File | Description | Size | Format | |
---|---|---|---|---|
Optical characteristics and dispersion parameters of thermally evaporated Ge50In4Ga13Se33 chalcogenide thin films.pdf | 2.18 MB | Unknown | View/Open |
Similar Items from Core Recommender Database
Items in Ain Shams Scholar are protected by copyright, with all rights reserved, unless otherwise indicated.