Optical Constants of The Thermally Evaporated a-Se70Ge30 Thin Films
E. G. El-Metwally; M. O. Abou-Helal; I. S. Yahia;
Abstract
Thermal evaporation technique was used to prepare a-Ge70Se30 thin films onto glass
substrates of thicknesses range (108–717 nm). Transmittance measurements in the
wavelength range (400-2500nm) were used to calculate the refractive index n and the
extinction coefficient k using Swanepole’s method. The calculated parameters such as
optical band gap optg E , the width of the tail of localized states in the band gap e E , optical
conductivity opt σ , complex dielectric constant, relaxation time τ and dissipation factor
tanδ were determined. The analysis of the optical absorption data revealed that the
optical band gap optg E was indirect transitions. The optical dispersion parameters o E and
d E were determined according to Wemple - DiDomenico method.
substrates of thicknesses range (108–717 nm). Transmittance measurements in the
wavelength range (400-2500nm) were used to calculate the refractive index n and the
extinction coefficient k using Swanepole’s method. The calculated parameters such as
optical band gap optg E , the width of the tail of localized states in the band gap e E , optical
conductivity opt σ , complex dielectric constant, relaxation time τ and dissipation factor
tanδ were determined. The analysis of the optical absorption data revealed that the
optical band gap optg E was indirect transitions. The optical dispersion parameters o E and
d E were determined according to Wemple - DiDomenico method.
Other data
Title | Optical Constants of The Thermally Evaporated a-Se70Ge30 Thin Films | Authors | E. G. El-Metwally ; M. O. Abou-Helal; I. S. Yahia | Keywords | Amorphous semiconductor;Thin film;SeGe;Optical dispersion parameters;Dielectric constant;Dissipation factor;relaxation time;Optical conductivity | Issue Date | Apr-2008 | Journal | Journal of Ovonic Research | Volume | 4 | Issue | 2 | Start page | 20 | End page | 34 |
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