Electrical and switching properties of amorphous films based on the Ge–Se–Tl system
Afifi, M.A; Abdel Aziz, M.M.; Labib, H.H; Fadel, M; E. G. El-Metwally;
Abstract
Electrical conductivity and I}< characteristics have been investigated as a function of thickness in the range
(104.4}618.3 nm) and temperature in the range (303}403 K) below the glass transition ¹ for thin "lmsam ples of
GeSe
Tl (x"2,3,4) chalcogenide glass system. The DC conductivity results indicate that each composition has
single activation energy E in the considered temperature range. The increase of Tl content in the chalcogenide glass
systemleads to increase in electrical conductivity at room temperature , and decreases the activation energy E . The
observed compositional dependence of E have been correlated with the increase of weak bond density and the decrease
of covalent bond density in the structure of the compositions investigated with increasing Tl content. From I}<
characteristic curves, it was found that the investigated samples show a memory e!ect. The threshold voltage increases
linearly with increasing "lmthickness while decreases exponentially with increasing temperature. The rapid transition
between the highly resistive and conductive states was attributed to an electrothermal model initiated from Joule heating
of a current channel.
(104.4}618.3 nm) and temperature in the range (303}403 K) below the glass transition ¹ for thin "lmsam ples of
GeSe
Tl (x"2,3,4) chalcogenide glass system. The DC conductivity results indicate that each composition has
single activation energy E in the considered temperature range. The increase of Tl content in the chalcogenide glass
systemleads to increase in electrical conductivity at room temperature , and decreases the activation energy E . The
observed compositional dependence of E have been correlated with the increase of weak bond density and the decrease
of covalent bond density in the structure of the compositions investigated with increasing Tl content. From I}<
characteristic curves, it was found that the investigated samples show a memory e!ect. The threshold voltage increases
linearly with increasing "lmthickness while decreases exponentially with increasing temperature. The rapid transition
between the highly resistive and conductive states was attributed to an electrothermal model initiated from Joule heating
of a current channel.
Other data
| Title | Electrical and switching properties of amorphous films based on the Ge–Se–Tl system | Authors | Afifi, M.A; Abdel Aziz, M.M. ; Labib, H.H; Fadel, M; E. G. El-Metwally | Issue Date | 2001 | Publisher | Elsevier | Journal | Vacuum | Volume | 61 | Start page | 45 | End page | 53 | ISSN | 0042207X | DOI | 10.1016/S0042-207X(00)00443-7 |
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