Electrical and Dielectric Properties of amorphous Ge1Se1.35Tl0.1 Films

Abstract

The temperature dependence of the DC and AC electrical conductivitywere measured for Gel Se1.35 Tl0 .1 films. The value of DC electrical conduc-tion energy DEσ does not depend on film thickness in the investigated rangewith mean value of 0.72 eV. The AC conductivity σAC is related to frequencyby the expression σAC = Aωs, where S is the frequency exponent which de-creases linearly with increasing temperature. This can be explained in termsof the pair (bipolaron) correlated barrier hopping model suggested by Elliott.The frequency and temperature dependence of real and imaginary parts ofthe dielectric constant were studied for Gel Sei.35 T10.1 films. The dielectricconstant (real part) and the dielectric loss (imaginary part) increase withincreasing temperature and decrease with increasing frequency in the inves-tigated range of frequency and temperature. The maximum barrier heightWM can be calculated according to the Giuntini equation at different tem-peratures. The obtained value of WM is in good agreement with the theoryof hopping of charge carriers over a potential barrier as suggested by Elliottin case of chalcogenide glasses.