Conduction mechanism in the pre-switching state of thin films containing Te As Ge Si
El-Samanoudy, M.M; N.A. Hegab,; M. Fadel;
Other data
| Title | Conduction mechanism in the pre-switching state of thin films containing Te As Ge Si | Authors | El-Samanoudy, M.M ; N.A. Hegab,; M. Fadel | Issue Date | 1995 | Journal | Vacuum | Issue | 46 | Start page | 701 | End page | 707 |
Recommend this item
Similar Items from Core Recommender Database
Items in Ain Shams Scholar are protected by copyright, with all rights reserved, unless otherwise indicated.