Influence of Substrate Temperature on the Structural and the Electrical Properties of CdIn2Se4 Thin Films
M.A.M.Seyam; Salem G.F; S.N.A.Aziz;
Abstract
CdIn2Se4 thin films of different thicknesses were prepared on precleaned glass substrates by the thermal evaporation technique under
vacuum 10-5 Torr. The influence of substrate temperature on the
structural and the electrical properties has been studied. The crystal
structure and orientation of the prepared films were investigated by
x-ray diffraction. The x-ray analysis confirmed that thin films of CdIn2Se4
thermally evaporated at room temperature are polycrystalline with cubic
crystal structure. The films were preferred orientation along plane (202).
The crystallite size (ranged between 17.8 nm and 24.7 nm) increases with
increasing substrate temperature. The room temperature resistivity for
the films deposited at room temperature was in the order of 107 Ωcm,
which decreased to 102 Ωcm for substrate temperature at 523 K. The
activation energy varied from 0.32 eV to 0.22 eV with increasing
substrate temperature from 298 K to 523 K. The thermoelectric power
measurements of CdIn2Se4 thin films revealed that all deposited films at
different substrate temperature were n-type semiconductors. The density
of charge carriers of films grown at 298 and 498 K were 7.01x1018 and
1.45x1019 cm-3
respectively
vacuum 10-5 Torr. The influence of substrate temperature on the
structural and the electrical properties has been studied. The crystal
structure and orientation of the prepared films were investigated by
x-ray diffraction. The x-ray analysis confirmed that thin films of CdIn2Se4
thermally evaporated at room temperature are polycrystalline with cubic
crystal structure. The films were preferred orientation along plane (202).
The crystallite size (ranged between 17.8 nm and 24.7 nm) increases with
increasing substrate temperature. The room temperature resistivity for
the films deposited at room temperature was in the order of 107 Ωcm,
which decreased to 102 Ωcm for substrate temperature at 523 K. The
activation energy varied from 0.32 eV to 0.22 eV with increasing
substrate temperature from 298 K to 523 K. The thermoelectric power
measurements of CdIn2Se4 thin films revealed that all deposited films at
different substrate temperature were n-type semiconductors. The density
of charge carriers of films grown at 298 and 498 K were 7.01x1018 and
1.45x1019 cm-3
respectively
Other data
Title | Influence of Substrate Temperature on the Structural and the Electrical Properties of CdIn2Se4 Thin Films | Authors | M.A.M.Seyam; Salem G.F ; S.N.A.Aziz | Issue Date | 2011 | Publisher | 2011 | Journal | Egypt. J. Solids | Volume | 34 | Start page | 286 | End page | 296 |
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