Tailoring the electrical characterization of epitaxialCuInGaSe(2) thin film-based device for photodiode appliances

Abstract

Herein we report on the epitaxial growth progression of a high-quality thin film of CuInGaSe by the liquid phase epitaxial on single crystalline substrates of Si. The low grain boundaries of the epitaxial film can enhance the photodiode properties of the prepared device. The mean crystallite size and the microstrain of the epitaxial film were determined as 35.86 nm and 5.4 × 10 , respectively. The studied dielectric parameters have a remarkable dependence on voltage, frequency, and temperature. The behavior of impedance is characterized by the presence of a single semicircular arc, indicating the existence of a single relaxation mechanism. The frequency dependent of both real and imaginary dielectric constants is controlled by interfacial dipoles. The current-voltage showed a diode-like behavior and the generated current is thermally activated. The response of the CuInGaSe – based heterojunction to the influence of illumination specifies the utilization for optoelectronic device implementation. 2 2 −3