Junction parameters and characterization of Au/n-Ge15In5Se80/p-Si/Al heterojunction

Abstract

The analysis of the electrical properties of Au/n-Ge15In5Se80/p-Si/Al heterojunction is examined. I–V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages (V < 0.25). While, at relatively high forward voltage, the space charge limited conduction is the operating mechanism. The rectification ratio, ideality factor, barrier height, total trap concentration and built-in voltage are determined. The capacitance–voltage (C–V) characteristics of Au/n-Ge15In5Se80/p-Si/Al heterojunction are also investigated. The I–V curve of the Au/n-Ge15In5Se80/p-Si/Al heterojunction in the dark and after illumination is clarified.