Long-lived quantum coherence in a two-level semiconductor quantum dot

Ahmed Mohamed Abukahla, Doaa;

Abstract


In this paper, we present an analytical solution for the system of two-level semiconductor quantum dot. In addition, we discuss the rates of the photon radiative and phonon radiationless transitions from the excited state (α12, α21) , the rate of processes of pure dephasing (γ) , the detuning parameter (Δ) and the Rabi frequency (Ω), on the atomic occupation probabilities (ρ11(t) and ρ22(t)) , the atomic population inversion (ρz(t)) , the purity (PA(t)) , the von Neumann entropy (S(t)) and the information entropies (H(σx) , H(σy) and H(σz)). We clearly observe the emergence of long-lived quantum coherence phenomenon in all the curves for some special cases of α12, α21, γ, Δ and Ω. Besides, the decay phenomenon is quite evident in the purity curves, which can be simply controlled by changing the values of α12, α21 and γ.


Other data

Title Long-lived quantum coherence in a two-level semiconductor quantum dot
Authors Ahmed Mohamed Abukahla, Doaa 
Keywords 03.67.−a | 42.50.−p | long-lived quantum coherence | quantum dot | Semiconductor
Issue Date 1-Dec-2020
Journal Pramana - Journal of Physics 
ISSN 03044289
DOI 10.1007/s12043-020-1932-y
Scopus ID 2-s2.0-85083481615

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