Memory Switching in Amorphous Se90Te10 xPbx
H.E.Atyia;
Abstract
The effect of various factors such as temperature, film thickness, and Pb
content on the electrical conductivity and switching phenomenon in Se90
Te10 xPbx films has been examined and is discussed herein. X-ray diffraction
analysis and energy-dispersive x-ray spectroscopy were used to confirm the
structure and chemical composition of the films, respectively. The variation of
the electrical conductivity rdc with Pb addition was correlated with the nature
and strength of the Pb bonds in the SeTe matrix. Current–voltage charac teristic curves showed two regions of high and low resistance with negative
differential resistances, revealing memory-type switching corresponding to an
electrothermal model. The applicability of this model was confirmed using the
electrical to switching activation energy ratio, as well as the heat dissipation
factor. The mean switching voltage was found to be dependent on tempera ture, film thickness, and composition. The decrease in the switching voltage
with Pb addition is analyzed based on the thermal stability variation
content on the electrical conductivity and switching phenomenon in Se90
Te10 xPbx films has been examined and is discussed herein. X-ray diffraction
analysis and energy-dispersive x-ray spectroscopy were used to confirm the
structure and chemical composition of the films, respectively. The variation of
the electrical conductivity rdc with Pb addition was correlated with the nature
and strength of the Pb bonds in the SeTe matrix. Current–voltage charac teristic curves showed two regions of high and low resistance with negative
differential resistances, revealing memory-type switching corresponding to an
electrothermal model. The applicability of this model was confirmed using the
electrical to switching activation energy ratio, as well as the heat dissipation
factor. The mean switching voltage was found to be dependent on tempera ture, film thickness, and composition. The decrease in the switching voltage
with Pb addition is analyzed based on the thermal stability variation
Other data
| Title | Memory Switching in Amorphous Se90Te10 xPbx | Authors | H.E.Atyia | Keywords | Current–voltage characteristics, electrical conductivity, memory | Issue Date | 8-Feb-2017 | Publisher | Journal of ELECTRONIC MATERIALS | Volume | 46 | Issue | 4 |
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