Carrier transport mechanisms and photovoltaic characteristics of p-H2 Pc/n-Si heterojunctions
Farid, Ashgan; Farag, A.A.M,; Ali, H. A.M.; El-Nahass, M.M.;
Abstract
Heterojunction cells of p-H2Pc/n-Si were fabricated by vacuum deposition of p-H2Pc thin films onto n-Si single crystals. Measurements of the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics have been evaluated to identify the mechanisms of barrier formation and, consequently, current flow. The forward current involves tunneling and could be explained by a multi-step tunneling recombination model due to a high density of interface defects. The C-V characteristics indicate an abrupt heterojunction model. The devices exhibit strong photovoltaic characteristics with an open-circuit voltage of 0.34 V, a short-circuit current density of 17.5 mA/cm2 and a power conversion efficiency of 1.5%. These parameters have been estimated at room temperature and under constant illumination of 150 mW/cm2. © 2006.
Other data
Title | Carrier transport mechanisms and photovoltaic characteristics of p-H<inf>2</inf>Pc/n-Si heterojunctions | Authors | Farid, Ashgan ; Farag, A.A.M, ; Ali, H. A.M.; El-Nahass, M.M. | Keywords | Carrier transport mechanisms | p-H PC/n-Si heterojunction 2 | Photovoltaic characteristics | Issue Date | 16-Sep-2006 | Publisher | PERGAMON-ELSEVIER SCIENCE LTD | Journal | Vacuum | ISSN | 0042207X | DOI | 10.1016/j.vacuum.2006.01.050 | Scopus ID | 2-s2.0-33747599625 | Web of science ID | WOS:000240582100002 |
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