Electrical conductivity and crystallization kinetics of amorphous Se0.81In0.19 films
Abdel-Wahab, Fathy; El-Hakim, SA; Kotkata, MF;
Abstract
The temperature dependence of the DC conductivity (σ) of amorphous Se and Se0.81In0.19 thin films, prepared by thermal evaporation, has been studied. The incorporation of In atoms in a Se matrix leads to an increase in the electrical conductivity of Se0.81In 0.19 and to a decrease in the thermal activation energy of conduction from 0.57 to 0.24 eV. The change in σ with time during the amorphous-to-crystalline transformation is recorded for Se0.81In 0.19 films at different isothermal temperatures in the range 343-373 K. The results indicate that the micro-heterogeneous structures of the films have a remarkable influence on the electrical conductivity during the amorphous-to-crystalline transition. The formal crystallization theory of Avrami has been used to calculate the kinetic parameters of crystallization. The activation energy of the amorphous-to-crystalline transformation is found to be 0.82 and 1.29 eV, respectively, for the two stages of crystallization during the time period of the transformation process. © 2005 Elsevier B.V. All rights reserved.
Other data
Title | Electrical conductivity and crystallization kinetics of amorphous Se0.81In0.19 films | Authors | Abdel-Wahab, Fathy ; El-Hakim, SA; Kotkata, MF | Keywords | amorphous semiconductors;chalcogenides;electrical properties;crystallization kinetics;selenium-indium;PHASE-CHANGE;SYSTEM | Issue Date | 2005 | Publisher | ELSEVIER SCIENCE BV | Journal | Physica B: Condensed Matter | Volume | 366 | Issue | 1-4 | Start page | 38 | End page | 43 | ISSN | 0921-4526 | DOI | 10.1016/j.physb.2005.05.018 | Scopus ID | 2-s2.0-23344433789 | Web of science ID | WOS:000231397600004 |
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