Thermal annealing effect on the electrical properties and structural defects density of non-stoichiometric a-GaAs films
Abdel-Wahab, Fathy; Kotkata, MF;
Abstract
Amorphous gallium arsenide (a-GaAs) films were prepared from their constituents using the co-evaporation technique. The temperature dependence of DC conductivity for the as-deposited (fresh) As-rich and that of thermally annealed films over the temperature range 373-553 K is measured. Results of the characteristic electrical parameters indicate non-monotonic behavior during the thermal annealing range 373-423 K and a monotonic one in the range 423-553 K. Results of the density of structural defect states, using the space-charge-limited current model, are given and discussed in relation to the nature and distribution of defect states regarding their dependence on the thermal treatment. © 2005 Elsevier B.V. All rights reserved.
Other data
| Title | Thermal annealing effect on the electrical properties and structural defects density of non-stoichiometric a-GaAs films | Authors | Abdel-Wahab, Fathy ; Kotkata, MF | Keywords | GaAs;electrical properties;tetrahedral semiconductors;amorphous semiconductors;CHARGE-LIMITED CURRENTS;AMORPHOUS-III-V;TEMPERATURE;EXAFS | Issue Date | 2005 | Publisher | ELSEVIER | Journal | Physica B: Condensed Matter | Volume | 368 | Issue | 1-4 | Start page | 209 | End page | 214 | ISSN | 0921-4526 | DOI | 10.1016/j.physb.2005.07.016 | Scopus ID | 2-s2.0-26444484973 | Web of science ID | WOS:000232959400030 |
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