Luminescence of epitaxial cerium oxide films on silicon substrates
Morshed, Ahmed Hisham; Moussa, M. E.; El-Masry, N.; Bedair, S. M.;
Abstract
The photoluminescence of cerium oxide films grown epitaxially on Si(111) substrates is reported. A relatively sharp emission peak in the violet/blue wavelength range was observed from films treated by rapid thermal annealing in argon. High resolution transmission electron microscopy and x-ray diffraction measurements indicated the formation of a single crystal cerium oxide phase different from CeO2 and Ce2O3 in the annealed films. The emission might be due to charge transfer transitions from the 4f band to the valence band of the oxide.
Other data
| Title | Luminescence of epitaxial cerium oxide films on silicon substrates | Authors | Morshed, Ahmed Hisham ; Moussa, M. E.; El-Masry, N.; Bedair, S. M. | Keywords | 4f Band | Ce O 6 11 | Cerium Oxide | Oxygen Vacancies | Photoluminescence | Issue Date | 1-Jan-1997 | Journal | Materials Science Forum | ISSN | 02555476 | DOI | 10.4028/www.scientific.net/msf.239-241.291 | Scopus ID | 2-s2.0-0030681601 |
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