AC conductivity and dielectric properties of Sb<inf>2</inf>S<inf>3</inf> films

Abstract

Stoichometric Sb2S3 films were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the as-deposited Sb2S3 films is in the amorphous state. The ac conductivity and dielectric properties of the amorphous Sb2S3 films has been investigated in the frequency range of 100-100 kHz. The ac conductivity is found to be proportional to ωS where s<1. The temperature dependence of ac conductivity and the parameter s can be discussed with the aim of the correlated barrier-hopping (CBH) model. The maximum barrier height WM calculated from dielectric measurements according to Guintini equation agrees with the theory of hopping of charge carriers over potential barrier as suggested by Elliot in the case of chalcogenide glasses.