A low-power wideband CMOS LNA for WiMAX
Amer, Ahmed; Hegazi, Emad; Ragai, Hani;
Abstract
In this brief, the design of a low-power inductorless wideband low-noise amplifier (LNA) for worldwide interoperability for microwave access covering the frequency range from 0.1 to 3.8 GHz using 0.13-μm CMOS is described. The core consumes 1.9 mW from a 1.2-V supply. The chip performance achieves S11below —10 dB across the entire band and a minimum noise figure of 2.55 dB. The simulated third-order input intercept point is —2.7 dBm. The voltage gain reaches a peak of 11.2 dB in-hand with an upper 3-dB frequency of 3.8 GHz, which can be extended to reach 6.2 GHz using shunt inductive peaking. A figure of merit is devised to compare the proposed designs to recently published wideband CMOS LNAs. © 2007, IEEE. All rights reserved.
Other data
Title | A low-power wideband CMOS LNA for WiMAX | Authors | Amer, Ahmed; Hegazi, Emad ; Ragai, Hani | Keywords | Figure of merit (FOM) | inductive peaking low-noise amplifier (LNA) | noise figure (NF) | wideband amplifiers | Issue Date | 1-Jan-2007 | Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Journal | IEEE Transactions on Circuits and Systems II: Express Briefs | ISSN | 15497747 | DOI | 10.1109/TCSII.2006.884113 | Scopus ID | 2-s2.0-33847619318 | Web of science ID | WOS:000243890700002 |
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