A low-power wideband CMOS LNA for WiMAX

Amer, Ahmed; Hegazi, Emad; Ragai, Hani;

Abstract


In this brief, the design of a low-power inductorless wideband low-noise amplifier (LNA) for worldwide interoperability for microwave access covering the frequency range from 0.1 to 3.8 GHz using 0.13-μm CMOS is described. The core consumes 1.9 mW from a 1.2-V supply. The chip performance achieves S11below —10 dB across the entire band and a minimum noise figure of 2.55 dB. The simulated third-order input intercept point is —2.7 dBm. The voltage gain reaches a peak of 11.2 dB in-hand with an upper 3-dB frequency of 3.8 GHz, which can be extended to reach 6.2 GHz using shunt inductive peaking. A figure of merit is devised to compare the proposed designs to recently published wideband CMOS LNAs. © 2007, IEEE. All rights reserved.


Other data

Title A low-power wideband CMOS LNA for WiMAX
Authors Amer, Ahmed; Hegazi, Emad ; Ragai, Hani
Keywords Figure of merit (FOM) | inductive peaking low-noise amplifier (LNA) | noise figure (NF) | wideband amplifiers
Issue Date 1-Jan-2007
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Journal IEEE Transactions on Circuits and Systems II: Express Briefs 
ISSN 15497747
DOI 10.1109/TCSII.2006.884113
Scopus ID 2-s2.0-33847619318
Web of science ID WOS:000243890700002

Recommend this item

Similar Items from Core Recommender Database

Google ScholarTM

Check

Citations 98 in scopus


Items in Ain Shams Scholar are protected by copyright, with all rights reserved, unless otherwise indicated.