Electronic frequency compensation of AlN-on-Si MEMS reference oscillators
Kourani, Ali; Hegazi, Emad; Ismail, Yehea;
Abstract
In this paper we report on the design of a frequency compensation system for AlN-on-Si MEMS reference oscillator to replace temperature compensated crystal oscillators (TCXOs) in cellular handsets. A 76.8 MHz, 105 ppm Temperature Stable, AlN-on-Si MEMS Oscillator is designed to demonstrate the frequency compensation scheme. Double layers of SiO2 are used for passive temperature compensation. The oscillator consumes 850 μA, with phase noise of -127 dBc/Hz at 1 kHz frequency offset. Temperature drift errors and initial frequency offset of ±8000 ppm are combined and further tackled electronically. A simple digital compensation circuitry generates a compensation word to a 21-bit MASH 1-1-1 ΔΣ modulator included in LTE fractional N-PLL for frequency compensation. Temperature is sensed using 4.6 μA, 11.5 bit temperature to digital converter TDC with resolution of 0.1 °C in 100 ms conversion time. The paper presents the first AlN-on-Si oscillator platform with ±0.5 ppm frequency stability over temperature ranges from -40 °C to 85 °C. The system runs on 1.8 V supply in 32 nm CMOS.
Other data
Title | Electronic frequency compensation of AlN-on-Si MEMS reference oscillators | Authors | Kourani, Ali; Hegazi, Emad ; Ismail, Yehea | Keywords | 4G | Frequency compensation | Incremental ADC | MEMS | Phase locked loop | Phase noise | Piezoelectric resonator | Reference oscillator | Sigma delta ADC | TCXO | Temperature compensation | Temperature sensor | Temperature to digital converter | Wireless | Issue Date | 1-Aug-2016 | Publisher | ELSEVIER SCI LTD | Journal | Microelectronics Journal | ISSN | 00262692 | DOI | 10.1016/j.mejo.2016.04.010 | Scopus ID | 2-s2.0-84973365148 | Web of science ID | WOS:000381591100010 |
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