Current-voltage and photovoltaic characteristics of n-Ge 10 Se80 In10 /p-Si heterojunction
El-Nahass, M. M.; E.F.M.El-Zaidia; Ali, M. H.; Zedan, I. T.;
Abstract
In this work, the analysis of electrical properties Au/n-Ge 10Se80In10/p-Si/Al heterojunction is studied. The dark forward current-voltage characteristics showed a thermoionic emission mechanism at low voltages (≤0.4 V) followed by a SCLC mechanism at high voltages (≤0.5 V). The junction parameters like series resistance, rectification ratio, ideality factor, effective barrier height, and total trap concentration were determined. The capacitance-voltage (C-V) characteristics of n-Ge10Se80In10/p-Si devices were also investigated. The barrier height value obtained from the C-V measurements was found to be 0.56 eV. Solar cell parameters were also evaluated under illumination of 6 mW/cm2 and the power conversion efficiency was estimated as 1.5%. © 2014 Elsevier Ltd.
Other data
| Title | Current-voltage and photovoltaic characteristics of n-Ge <inf>10</inf>Se<inf>80</inf>In<inf>10</inf>/p-Si heterojunction | Authors | El-Nahass, M. M.; E.F.M.El-Zaidia ; Ali, M. H.; Zedan, I. T. | Keywords | Barrier height;Heterojunction;Solar cell | Issue Date | 1-Jan-2014 | Publisher | ELSEVIER SCI LTD | Journal | Materials Science in Semiconductor Processing | Volume | 24 | Start page | 254 | End page | 259 | ISSN | 13698001 | DOI | 10.1016/j.mssp.2014.03.045 | Scopus ID | 2-s2.0-84898957092 | Web of science ID | WOS:000337553800038 |
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