Characteristics of dielectric properties and conduction mechanism of TlInS2 :Cu single crystals
El-Nahass, M. M.; Ali, H. A.M.; E.F.M.El-Zaidia;
Abstract
Single crystals of TlInS2:Cu were grown by the modified Bridgman method. The dielectric behavior of TlInS2:Cu was investigated using the impedance spectroscopy technique. The real (ε1), imaginary (ε2) parts of complex dielectric permittivity and ac conductivity were measured in the frequency range (42-2×105) Hz with a variation of temperature in the range from 291 K to 483 K. The impedance data were presented in Nyquist diagrams for different temperatures. The frequency dependence of σtot (ω) follows the Jonscher's universal dynamic law with the relation σtot (ω)=σdc+Aωs, (where s is the frequency exponent). The mechanism of the ac charge transport across the layers of TlInS2:Cu single crystals was referred to the hopping over localized states near the Fermi level. The examined system exhibits temperature dependence of σac (ω), which showed a linear increase with the increase in temperature at different frequencies. Some parameters were calculated as: the density of localized states near the Fermi level, N F, the average time of charge carrier hopping between localized states, τ, and the average hopping distance, R. © 2013 Elsevier B.V.
Other data
Title | Characteristics of dielectric properties and conduction mechanism of TlInS<inf>2</inf>:Cu single crystals | Authors | El-Nahass, M. M.; Ali, H. A.M.; E.F.M.El-Zaidia | Keywords | Dielectric properties;Electrical properties;Impedance spectroscopy;TlInS :Cu Single crystal 2 | Issue Date | 2-Oct-2013 | Publisher | ELSEVIER SCIENCE BV | Journal | Physica B: Condensed Matter | Volume | 431 | Start page | 54 | End page | 57 | ISSN | 09214526 | DOI | 10.1016/j.physb.2013.08.035 | Scopus ID | 2-s2.0-84884682348 | Web of science ID | WOS:000325939500011 |
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