Fabrication, electrical and photovoltaic characteristics of perylene-66 based diodes (comparative study)
El-Nahass, M. M.; Farag, A.A.M,; Khosifan, N. M.; E.F.M.El-Zaidia;
Abstract
In this work, two diodes of Au/perylene-66/p-Si/Al and Au/perylene-66/TiO2/p-Si/Al were prepared by conventional thermal evaporation technique. Temperature-dependence of the electrical characteristics of the two diodes in the temperature range of 303-373 K was investigated. Barrier height and ideality factor were determined and studied as a function of temperature. The barrier height was found to increase and the ideality factor decreases by increasing temperature which may be attributed to barrier height inhomogeneities. Variation of the capacitance-voltage characteristics (i.e. 1/C2-V dependence) shows a straight line fit which support the abrupt diode type. Most of diode parameters of Au/perylene-66/TiO2/p-Si/Al is found to be high as compared to Au/perylene-66/p-Si/Al due to the effect of TiO2insertion. The photovoltaic characteristics of the two diodes were investigated under illumination to study the applicability for optoelectronic applications.
Other data
| Title | Fabrication, electrical and photovoltaic characteristics of perylene-66 based diodes (comparative study) | Authors | El-Nahass, M. M.; Farag, A.A.M, ; Khosifan, N. M.; E.F.M.El-Zaidia | Keywords | Electrical characteristics;Optoelectronic;Organic/inorganic hybrid structure;Photovoltaic characteristics | Issue Date | 22-Jul-2015 | Publisher | ELSEVIER SCIENCE SA | Journal | Synthetic Metals | Volume | 209 | Start page | 74 | End page | 81 | ISSN | 03796779 | DOI | 10.1016/j.synthmet.2015.06.021 | Scopus ID | 2-s2.0-84937544316 | Web of science ID | WOS:000364245900012 |
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