Structural, electronic, and optoelectronic characteristics of GaClPc/n-Si heterojunction for photodiode device
Al-Ghamdi, S. A.; Hamdalla, Taymour A.; E.F.M.El-Zaidia; Alzahrani, Ahmed Obaid M.; Alghamdi, Nawal; Khasim, Syed; Yahia, I. S.; Darwish, A. A.A.;
Abstract
Phthalocyanines are promising materials that have unique electronic and optoelectronic properties. Therefore, the fabrication of phthalocyanines doped by Gallium chloride GaClPc/n-Si heterojunction (HJ) has been done. The internal structural properties of GaClPc have been carried out using scan electron microscopy and X-rays diffraction, where it was found that the film has a nanostructure with an average particle size of 150 ± 45 nm. The capacitance-voltage of GaClPc/n-Si HJ was investigated, where the carrier concentration and built-in voltage were calculated as 6.74 × 1021 cm−3 and 0.91 V, respectively. The I–V characteristics of our investigated diode have been examined using Shockley equations. The electronic characteristics of GaClPc/n-Si HJ were studied in dark conditions and under different illumination intensities up to 100 mW/cm2. The obtained values of series and shunt resistances under dark conditions are 4.5 × 104 and 4.1 × 106 Ω, respectively. The photosensitivity of GaClPc/n-Si HJ increased up to 11.41 × 104 as the illumination intensity reached 100 mW/cm2. These results candidate the fabricated GaClPc/n-Si HJ for potential applications in photodiode devices.
Other data
Title | Structural, electronic, and optoelectronic characteristics of GaClPc/n-Si heterojunction for photodiode device | Authors | Al-Ghamdi, S. A.; Hamdalla, Taymour A.; E.F.M.El-Zaidia ; Alzahrani, Ahmed Obaid M.; Alghamdi, Nawal; Khasim, Syed; Yahia, I. S.; Darwish, A. A.A. | Keywords | Capacitance-voltage;Current-voltage analysis;Optoelectronic;Organic photodiode | Issue Date | 15-Aug-2022 | Publisher | ELSEVIER SCI LTD | Journal | Materials Science in Semiconductor Processing | Volume | 147 | ISSN | 13698001 | DOI | 10.1016/j.mssp.2022.106704 | Scopus ID | 2-s2.0-85130949219 | Web of science ID | WOS:000831678300003 |
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