Characterization and photovoltaic performance of organic device based on CoMTPP/p-Si heterojunction
El-Nahass, M. M.; Atta, A. A.; E.F.M.El-Zaidia; Hendi, A. A.;
Abstract
Hybrid organic/inorganic heterojunction of nanocrystalline 5,10,15,20-Tetrakis(4-methoxyphenyl)-21H,23H-porphine cobalt(II), (CoMTPP) and p-Si was fabricated by using the conventional thermal evaporation technique. The morphologies of the CoMTPP/p-Si were investigated by scanning electron microscopy (SEM). The dark current-voltage (I-V) characteristics of Au/p-CoMTPP/p-Si/Al heterojunction diode measured at different temperatures ranging from 298 to 423 K have been investigated. Analytical approaches involving the thermionic emission and space charge limited currents (SCLC) were used to explain the I-V behavior in the forward bias. On the other hand, the carrier generation-recombination process limits the reverse current. The dependence of capacitance-voltage (C-2-V) for the device CoMTPP/p-Si was found to be almost linear which indicates that the junction behavior is abrupt nature and then the essential junction parameters were obtained. The performance of heterojunction showed a photovoltaic behavior with an open circuit voltage, Voc, of 0.283 V, short circuit photocurrent I SC, of 0.433 mA and power conversion efficiency, η of 3.6%. © 2013 Elsevier B.V. All rights reserved.
Other data
Title | Characterization and photovoltaic performance of organic device based on CoMTPP/p-Si heterojunction | Authors | El-Nahass, M. M.; Atta, A. A.; E.F.M.El-Zaidia ; Hendi, A. A. | Keywords | Capacitance-voltage;CoMTPP;Conduction mechanism;Nanocrystalline structure;Photovoltaic properties | Issue Date | 25-Mar-2014 | Publisher | ELSEVIER | Journal | Microelectronic Engineering | Volume | 116 | Start page | 58 | End page | 64 | ISSN | 01679317 | DOI | 10.1016/j.mee.2013.10.008 | Scopus ID | 2-s2.0-84892373919 | Web of science ID | WOS:000331161300011 |
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