Physico-chemical properties of acid fuchsin as novel organic semiconductors: Structure, optical and electrical properties

E.F.M.El-Zaidia; Al-Kotb, M. S.; Yahia, I. S.;

Abstract


Acid fuchsin is a new organic semiconductor. The results of XRD measurements confirmed that acid fuchsin is polycrystalline in nature with a triclinic crystal structure with the P1 space group. The absorption index and the optical band gap transition of AF powder were calculated from the optical diffused reflectance (ODR). The direct, as well as the indirect band gaps, were calculated. These values of the energy band gaps for acid fuchsin enhance the light absorption and make it a suitable material to be applied in photovoltaic devices. The DC electrical conductivity of acid fuchsin was investigated in the temperature range 289–373 K. The AC electrical conductivity was discussed in terms of charge carrier hopping motions mechanism. Both the ε1 and ε2 which represent dielectric constant and dielectric loss, respectively, have been studied. Acid fuchsin can be used in organic devices as a new organic semiconductor.


Other data

Title Physico-chemical properties of acid fuchsin as novel organic semiconductors: Structure, optical and electrical properties
Authors E.F.M.El-Zaidia ; Al-Kotb, M. S.; Yahia, I. S.
Keywords Acid fuchsin dye;DC/AC electrical conductivities;Dielectric properties;Kubelka–munk model;Optical diffused reflectance/bandgap analysis;Organic semiconductors
Issue Date 15-Oct-2019
Publisher ELSEVIER
Journal Physica B: Condensed Matter 
ISSN 09214526
DOI 10.1016/j.physb.2019.06.060
Scopus ID 2-s2.0-85068254794
Web of science ID WOS:000483690600013

Recommend this item

Similar Items from Core Recommender Database

Google ScholarTM

Check

Citations 6 in scopus


Items in Ain Shams Scholar are protected by copyright, with all rights reserved, unless otherwise indicated.