Spin-dependent goos-hanchen effect in semiconducting quantum dots

Abstract

The present research is devoted to the investigation of the spin-dependant Goos-Hanchen phase shift in quantum nanodevice. This nanodevice is modeled as semiconducting quantum dot coupled to two ferromagnetic leads. The spin transport through such nanodevice is conducted under the effect of both magnetic field and the photon energy of the induced ac-field. The angle of incidence of electrons is taken into account. Results show that the Goos-Hanchen phase shift of spin-up electrons is different from that of spin-down electron. Also, spin polarization and giant magneto-resistance are strongly depending on the angle of incidence of electrons and the photon energy of the induced ac-field. The present model could realize experimentally the spin beam splitter and spin filter needed for spin qubits and quantum information processing.