MM-WAVE POWER AMPLIFIERS FOR 5G APPLICATIONS AND DIFFERENT POWER COMBINING TECHNIQUES

Abstract

Abstract Design trade-offs and challenges facing 5G power amplifiers are presented in this work. Different power amplifier classes are compared for 5G applications. Stacking transistors and Combining multiple power cells are discussed as a solution to achieve higher power levels without sacrificing efficiency or over-stressing the amplifier. Various properties of different power combining techniques like efficiency and impedance transformation are analyzed in depth and proper design guidelines are provided. The design of a fully differential two-stage two-way current combining power amplifier with an integrated transformer-based balun fabricated using CMOS technology to cover both n260 39GHz 5G (37G to 40GHz) and n259 41GHz 5G (39.5G to 43.5GHz) bands is discussed and the measurement results are presented.