X-ray structural phase analysis of CdTe semiconductor annealed in air

Abstract

X-ray structural phase analysis of CdTe semiconductor, thermally annealed in air at temperature range 373-773 K and annealing time 24 hrs, is investigated applying Rietveld method. The results showed that at low temperatures < 523 K, oxygen diffuses into the (1/2 1/2 1/2) interstitial sites of the CdTe lattice and its relative occupancy increases with the annealing temperature. For higher temperatures ≥ 523 K, the thermally grown oxide CdTeO, phase is developed on expense of CdTe phase. The percentage phase abundance of each phase is determined at each temperature applying a standardless method. The rate of oxidation with temperature is found to be non-linear.