Nature of electrical transport properties of nanocrystalline ZnIn2Se4 thin films

G.F.Salem ; M.M. El-Nahass ; A.A. Attia ; H.A.M. Ali ; M.I. Ismail 


© 2016 Elsevier Ltd ZnIn 2 Se 4 thin films were deposited on glass substrates by thermal evaporation technique. Some of ZnIn 2 Se 4 films were annealed under vacuum at 623 K for 2 h. Atomic force microscope (AFM) images were analyzed for as-deposited and annealed films. The roughness degree of the film surface decreased under the influence of annealing. DC Electrical conductivity studied as a function of temperature. Two activation energies were determined that ΔE 1  = 0.44 eV and ΔE 2  = 0.65 eV. Using thermo-electric measurements, the thermoelectric power factor (P), carrier concentration (n) and mobility (μ) were calculated. Current density–voltage characteristics of Al/ZnIn 2 Se 4 /Al sandwich structure were examined. Different mechanisms were obtained; ohmic conduction mechanism at lower voltages and space charge limited conductivity (SCLC) mechanisms at higher voltages.

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Keywords ZnIn2 Se4 thin films- Atomic force microscope- Electrical transport properties- Conduction mechanisms
Issue Date 1-Feb-2017
Journal Chaos, Solitons and Fractals 
Series/Report no. ;52-56
DOI 10.1016/j.chaos.2016.12.005

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