Analysis of electrical properties of heterojunction based on ZnIn2Se4

G.F.Salem ; A.A. Attia ; H.A.M. Ali ; M.I. Ismail ; F.F. Al-Harbi 


Abstract


© 2017 Elsevier B.V. Heterojunction of n-ZnIn 2 Se 4 /p-Si was fabricated using thermal evaporation of ZnIn 2 Se 4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current–voltage (I-V) for n-ZnIn 2 Se 4 /p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (R s ), shunt resistance (R sh ) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn 2 Se 4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm 2 . The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.


Other data

Issue Date 1-Apr-2017
Journal Optical Materials 
Series/Report no. ;480-486
URI http://api.elsevier.com/content/abstract/scopus_id/85014784934
http://research.asu.edu.eg/123456789/565
DOI 10.1016/j.optmat.2017.02.055


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