Transport Properties in the Deep Submicron MOS Devices using 2D Simulation
Tarek Mohammad Abdolkader;
Abstract
In the present work, a new highly user-oriented device simulator was developed for the study of transport properties of planar MOSFETs by the solution of basic semiconductor equations in two dimensions. This device simulator works under MATLAB environment
Other data
| Title | Transport Properties in the Deep Submicron MOS Devices using 2D Simulation | Other Titles | خواص الانتقال فى نبائط المعدن - الأكسيده - شبه الموصل تحت الميكرونيه باستخدام المحاكاه ثنائيه الأبعاد | Authors | Tarek Mohammad Abdolkader | Keywords | Transport Properties in the Deep Submicron MOS Devices using 2D Simulation | Issue Date | 2000 | Description | In the present work, a new highly user-oriented device simulator was developed for the study of transport properties of planar MOSFETs by the solution of basic semiconductor equations in two dimensions. This device simulator works under MATLAB environment |
Recommend this item
Similar Items from Core Recommender Database
Items in Ain Shams Scholar are protected by copyright, with all rights reserved, unless otherwise indicated.