Modeling and Simulation of a new Graded Band Gap Channel MOSFET for GHz applications
Hamdy Mohamed Abd-El Hameed Hamed;
Abstract
In this thesis we suggested a new MOSFET device that is realized by using the known MOSFET technology with a Graded Band Gap channel (GBGC) in the longitudinal direction from the source to drain with the greater band gap at the source side and the smaller
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| Title | Modeling and Simulation of a new Graded Band Gap Channel MOSFET for GHz applications | Other Titles | نمذجة وتمثيل نبيطة جديدة بتكنولوجيا م.و.س بقناة ذات نطاق فجوة تدريجي لتطبيقات الجيجاهرتز | Authors | Hamdy Mohamed Abd-El Hameed Hamed | Keywords | Modeling and Simulation of a new Graded Band Gap Channel MOSFET for GHz applications | Issue Date | 2000 | Description | In this thesis we suggested a new MOSFET device that is realized by using the known MOSFET technology with a Graded Band Gap channel (GBGC) in the longitudinal direction from the source to drain with the greater band gap at the source side and the smaller |
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