Electron Transport Characteristics within III-Nitride Semiconductors
Afnan Zakaria Mohamed Ahmed;
Abstract
Monte Carlo simulation of electron transport in wurtzite GaN has been performed, with screening of the electron polar optical mode interaction included and without assuming the static approximation. We have included the dynamic screening by using Lindhard
Other data
| Title | Electron Transport Characteristics within III-Nitride Semiconductors | Other Titles | خواص الإنتقال الكهربى فى نترات أشباه الموصلات | Authors | Afnan Zakaria Mohamed Ahmed | Keywords | Electron Transport Characteristics within III-Nitride Semiconductors | Issue Date | 2011 | Description | Monte Carlo simulation of electron transport in wurtzite GaN has been performed, with screening of the electron polar optical mode interaction included and without assuming the static approximation. We have included the dynamic screening by using Lindhard |
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