RADIATION EFFECTS ON THE PROPERTIES OF SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR DEVICES PREPARED BY OXYGEN ION IMPLANTATION TECHNIQUE (SIMOX)
AMANI ISMAIL EL-SHANSHOURY;
Abstract
Silicon-On-Insulator (SOI) is a new trend used in fabricating integrated circuits (ICs). Separation by implanted oxygen (SIMOX) process is the leading technology for SOI that povides high density, high performance, special purpose integrated cicuits.
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| Title | RADIATION EFFECTS ON THE PROPERTIES OF SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR DEVICES PREPARED BY OXYGEN ION IMPLANTATION TECHNIQUE (SIMOX) | Other Titles | تاثير الاشعاع على خواص نبائط اشباه الموصلات السليكون على العازل المصنعة بطريقة زراعة ايونات الاكسجين SIMOX | Authors | AMANI ISMAIL EL-SHANSHOURY | Keywords | RADIATION EFFECTS ON THE PROPERTIES OF SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR DEVICES PREPARED BY OXYGEN ION IMPLANTATION TECHNIQUE (SIMOX) | Issue Date | 1995 | Description | Silicon-On-Insulator (SOI) is a new trend used in fabricating integrated circuits (ICs). Separation by implanted oxygen (SIMOX) process is the leading technology for SOI that povides high density, high performance, special purpose integrated cicuits. The |
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