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| Issue Date | Title | Author(s) |
| 27-May-2009 | ac conductivity and dielectric properties of amorphous Se80Te20−xGex chalcogenide glass film compositions | N.A. Hegab ; Farid, Abir ; H.E. Atyia ; M.A. Afifi |
| 2019 | Ac electrical conductivity and dielectric relaxation behavior of amorphous Selinum36 Antimony31Cubber33 thin films | Fadel, M.; Abd ElWahabb, Ensherah ; A.S.Farid |
| 12-Apr-2016 | Compositional Dependence of the Optical Propertiesof Amorphous Semiconducting Glass Se80Ge20-_xCdx (0 < x <12 at.%) Thin Films | N.A. Hegab ; Farid, Abir ; A.M. Shakra ; M.A. Afifi ; A.M. Alrebati |
| 26-Aug-2016 | Conduction mechanism and dielectric properties of a Se80Ge20-_xCdx (0 < x <12 at.%) Films. | A.M. Shakra ; Farid, Abir ; N.A. Hegab ; M.A. Afifi ; A.M. Alrebati |
| 2020 | Current–voltage characterizations and photovoltaic properties of Se80Te15Ge5/p-Si heterojunction | El-Nahass, M.M. ; H.A.M. Ali ; A.S.Farid |
| Apr-2021 | Dc electrical conductivity and resistive memory Switching in Se36 Sb31Cu33 films | A.S.Farid ; N.A.Hegab; E.Abd El-Wahabb |
| 1-Dec-2022 | Effect of annealing temperature on the optical characteristics of Se80Te15Ge5 films for opto-electronic applications | A.S.Farid ; M.M. El-Nahass |
| 19-Sep-2014 | Electrical and Switching Phenomenon of Se80Ge20-xCdx (0 < x <12 at.%) Amorphous System | M.A. Afifi ; N.A. Hegab ; A.M. Shakra ; Farid, Abir ; A.M. Al rebati |
| 23-Apr-2011 | Electrical and switching properties of Se85Te15−xSbx (0 ≤ x ≤ 6 at.wt%) thin films | M. Fadel ; N.A. Hegab ; I.S. Yahia ; A.M. Salem ; Farid, Abir |
| Jun-2019 | Electrical conduction of chalcogenide Se90Te10-xTex(x=0,2,4&6)films | A.S.Farid ; N.A.Hegab |
| 1-Oct-2013 | Electrical Conductivity and Dielectric Properties of Se85Te15-xSbx (x = 0 at.%, 2 at.%, 4 at.%, and 6 at.%)Thin Films | N.A. Hegab ; M. Fadel ; I.S. Yahia ; A.M. Salem ; Farid, Abir |
| 2015 | Glass transition and crystallization study of Te additive Se Bi chalcogenide glass | Farid, Abir ; atyia, heba |
| 28-Jul-2017 | Glass transition kinetics aspects of amorphous Se60Ge15As25 and Se60Ge15Sn25 compositions | atyia, heba ; Hegab, N. A. ; Farid, Abir |
| Feb-2016 | Glass transition, thermal stability and glass-forming tendency of Se85Te10X5 (X = In, Sn) chalcogenide glasses | Farid, Abir ; N.A.Hegab ; E.Abd El-Wahabb ; H.Magdy |
| Apr-2019 | The Intensity dependency of the series resistance and other parameters of a photovoltic Silicon colar cell in relation to its performance | A.S.Farid ; M.K.El-Adawi; M.M.El.Nahass; S.A.Shalaby; N.A.Hegab |
| 8-Sep-2008 | Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system | M.A. Afifi ; N.A. Hegab ; H.E. Atyia ; Farid, Abir |
| Aug-2011 | KINETICS OF NON-ISOTHERMAL CRYSTALLIZATION OF TERNARY Se85Te15−xSbx GLASSY ALLOYS | I.S. YAHIA ; A.M.Shakra ; M. Fadel ; N.A. Hegab ; A.M. Salem ; Farid, Abir |
| 8-Dec-2017 | Memory switching of chalcogenide glass Se85 Te15 X5 (x=In, Sn) films | N.A. Hegab ; Farid, Abir ; E. Abd El-Wahabb ; H. Magdy |
| 2018 | Memory switching of chalcogenide glass Se85 Te15 X5 (x=In, Sn) films | Abd ElWahabb, Ensherah ; Magdy, H.; Hegab, N. A. ; A.S.Farid |
| 12-Dec-2015 | Non-isothermal crystallization kinetics of ternary Se 90 Te 10−x Pb x glasses | atyia, heba ; Farid, Abir |
| 7-Jun-2018 | Optical, dielectric and opto-electrical study of Se-Te-Ge glassy thin films | H. E. ATYIA ; S. S. FOUAD ; PANKAJ SHARMAb ; Farid, Abir ; N. A. HEGAB |
| Jun-2018 | Optical, dielectric and opto-electrical study of Se-Te-Ge glassy thin films J. Optoelectronics and advanced materials | A.S.Farid ; H. E. ATYIA; S. S. FOUAD; PANKAJ SHARMA; N.A.Hegab |
| Jul-2019 | Physical, optical and dielectric properties of Se85Te10X5 (X=Sn, In) Films | Hejab, Naima ; A.S.Farid |
| 19-Oct-2015 | The Effect of Annealing Above Glass Transition Temperature on the Optical Properties of Se85Te10Bi5 Thin Films | atyia, heba ; Farid, Abir |
