Si-based mm-Wave Transmitters Front End
Omar Essam Abdelfattah El-Aassa;
Abstract
This thesis explores the opportunities of implementing high performance front end of the transmitters at millimeter Wave (mm-Wave) frequencies using com- mercial low cost silicon based technology. The main focus is on power ampli- fiers (PAs) and methods to enhance their performance parameters. The thesis attempts to study the design challenges and performance limitations of such systems, mainly the reduced efficiency. Enhancements regarding the output power level, bandwidth, and linearity of the PAs are also proposed.
Several CMOS power amplifier classes are studied at mm-Waves regime. Design challenges in active and passive elements implementation is considered such as the reduced transistor gain, supply and quality factor of passives. A linear 60
GHz CMOS PA with 13 dB gain, 6 GHz bandwidth and a saturated output power of more than 15 dBm with a power added efficiency (P AE) of 8% is designed in 130nm CMOS Technology. Power combining technique is used to boost the achieved output power level.
Several CMOS power amplifier classes are studied at mm-Waves regime. Design challenges in active and passive elements implementation is considered such as the reduced transistor gain, supply and quality factor of passives. A linear 60
GHz CMOS PA with 13 dB gain, 6 GHz bandwidth and a saturated output power of more than 15 dBm with a power added efficiency (P AE) of 8% is designed in 130nm CMOS Technology. Power combining technique is used to boost the achieved output power level.
Other data
| Title | Si-based mm-Wave Transmitters Front End | Other Titles | الواجهة الأمامية لمرسلات الموجات الملليمترية المبنية على السيليكون | Authors | Omar Essam Abdelfattah El-Aassa | Issue Date | 2015 |
Attached Files
| File | Size | Format | |
|---|---|---|---|
| G11052.pdf | 465.14 kB | Adobe PDF | View/Open |
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